C4D20120D Datasheet, PDF (4/6 Pages) Cree, Inc – Silicon Carbide Schottky Diode

Typical Performance
225.50
1¹0⁰⁰0⁰0
220.00
115.50
110000
T_J = 25°C
T_J = 110°C
110.00
5.50
0.00
0₀2₂0₀₀04₄0₀0₀ 6₆₀0₀08₈0₀₀0 1₁0₀0₀₀0
V_R Re_Vve_Rrse₍V_Volt₎age (V)
Figure 7. Typical Capacitance Stored Energy
1100
11.EE-0-505 1E1.-E0-044 1E1.-E0-0331E1-.0E-202
t_p (s^tp)^(s)
Figure 8. Non-Repetitive Peak Forward Surge Current
versus Pulse Duration (sinusoidal waveform)
1
0.1
0.01
0.001
0.0001
1E-6
10E-6
100E-6
1E-3
10E-3
100E-3
1
10
T (Sec)
Figure 9. Transient Thermal Impedance
4
C4D20120D Rev. C