C4D20120D Datasheet, PDF (2/6 Pages) Cree, Inc – Silicon Carbide Schottky Diode

Electrical Characteristics (Per Leg)
Symbol Parameter
Typ.
Max. Unit
Test Conditions
V_F
Forward Voltage
1.5
2.2
1.8
3
V
I_F = 10 A T_J=25°C
I_F = 10 A T_J=175°C
I_R
Reverse Current
30
55
250
350
μA
V_R = 1200 V T_J=25°C
V_R = 1200 V T_J=175°C
Q_C
Total Capacitive Charge
52
V_R = 800 V, I_F = 10A
nC di/dt = 200 A/μs
T_J = 25°C
C
Total Capacitance
754
V_R = 0 V, T_J = 25°C, f = 1 MHz
45
pF V_R = 400 V, T_J = 25˚C, f = 1 MHz
38
V_R = 800 V, T_J = 25˚C, f = 1 MHz
Note:
1. This is a majority carrier diode, so there is no reverse recovery charge.
Thermal Characteristics
Note
Symbol
Parameter
R_θJC
Thermal Resistance from Junction
to Case
* _{Per Leg,} ** _{Per Device}
Typ.
0.85^*
0.43^**
Max.
Unit
°C/W
Test Conditions
Note
Typical Performance (Per Leg)
2200
1¹8⁸
1¹6⁶
1¹4⁴
1¹2²
1¹0⁰
8⁸
6
6
4
4
2
2
0
0
0₀
T_J=-55°C
T_J= 25°C
T_J= 75°C
T_J =125°C
T_J =175°C
0₀.5_.51₁ 1₁._.5₅2₂2₂._.5₅3₃3₃._.5₅
V_F
Forward Voltage (V)
V_F FoVrw_F a(rVd)Voltage
Figure 1. Forward Characteristics
0.000⁷⁰7⁰
0.0006060
0.000⁵⁰5⁰
0.0004040
0.000₃₀3₀
0.000²⁰2⁰
0.000₁₀1₀
T_J=-55°C
T_J= 25°C
T_J= 75°C
T_J =125°C
T_J =175°C
0⁰
0⁰
5⁵0⁰0⁰
1₁0₀0₀0₀
15₁0₅0₀₀
V_R
Reverse Voltage (V)
V_R RVev_Re(rsVe)Voltage
Figure 2. Reverse Characteristics
20₂0₀0₀₀
2
C4D20120D Rev. C