C4D20120D Datasheet, PDF (1/6 Pages) Cree, Inc – Silicon Carbide Schottky Diode

C4D20120D
Silicon Carbide Schottky Diode
Z-Rec^® Rectifier
Features
• 1.2-KVolt Schottky Rectifier
• Zero Reverse Recovery Current
• High-Frequency Operation
• Temperature-Independent Switching Behavior
• Positive Temperature Coefficient on V_F
Benefits
• Replace Bipolar with Unipolar Rectifiers
• Essentially No Switching Losses
• Higher Efficiency
• Reduction of Heat Sink Requirements
• Parallel Devices Without Thermal Runaway
Applications
• Switch Mode Power Supplies
• Power Factor Correction
• Motor Drives
Package
V_RRM =  1200 V
I_F (T_C=135˚C) =  33 A^**
Q_c
=  104 nC^**
TO-247-3
Part Number
C4D20120D
Package
TO-247-3
Marking
C4D20120
Maximum Ratings (TC=25°C unless otherwise specified)
Symbol
Parameter
Value
Test Conditions
Note
V_RRM
Repetitive Peak Reverse Voltage
V_RSM
Surge Peak Reverse Voltage
V_DC
DC Blocking Voltage
I_F
Continuous Forward Current
(Per Leg/Device)
I_FRM
Repetitive Peak Forward Surge Current
I_FSM
Non-Repetitive Peak Forward Surge Current
I_F,Max
Non-Repetitive Peak Forward Current
P_tot
Power Dissipation(Per Leg/Device)
T_J
Operating Junction Range
T_stg
Storage Temperature Range
TO-247 Mounting Torque
* _{Per Leg,} ** _{Per Device}
1200
V
1300
V
1200
V
34/68
T_C=25˚C
16.5/33 A T_C=135˚C
10/20
T_C=157˚C
47^*
31.5^*
A
T_C=25˚C, t_P=10 ms, Half Sine Pulse
T_C-110˚C, t_P=10 ms, Half Sine Pulse
71^*
59.5^*
A
T_C=25˚C, t_P=10 ms, Half Sine Pulse
T_C=110˚C, t_P=10 ms, Half Sine Pulse
750*
620*
A
T_C=25˚C, t_P=10 ms, Pulse
T_C=110˚C, t_P=10 ms, Pulse
176/352
76/152
W
T_C=25˚C
T_C=110˚C
-55 to
+175
˚C
-55 to
+135
˚C
1
Nm M3 Screw
8.8 lbf-in 6-32 Screw
1
C4D20120D Rev. C