C4D20120A Datasheet, PDF (4/6 Pages) Cree, Inc – Silicon Carbide Schottky Diode

Typical Performance
550.00
445.50
440.00
335.50
330.00
225.50
220.00
1¹5.⁵0
110.00
5.⁵0
0.00
0₀2₂0₀₀04₄0₀0₀ 6₆₀0₀08₈0₀₀0 1₁0₀0₀₀0
V_R Rev_Ver_Rse₍Vo_Vlta₎ge (V)
Figure 7. Typical Capacitance Stored Energy
1¹0⁰0⁰⁰0⁰0
11000000
110000
T_J = 25°C
T_J = 110°C
1100
11.EE-0-505 1E1.-E0-044 1E1.-E0-0331E1-.0E-202
t^t_p^p(^(ss⁾)
Figure 8. Non-Repetitive Peak Forward Surge Current
versus Pulse Duration (sinusoidal waveform)
1
0.5
0.3
100E-3
0.1
0.05
0.02
10E-3
0.01
SinglePulse
1E-3
1E-6
10E-6
100E-6
1E-3
10E-3
100E-3
1
T (Sec)
Figure 9. Transient Thermal Impedance
4
C4D20120A Rev. C