C4D20120A Datasheet, PDF (2/6 Pages) Cree, Inc – Silicon Carbide Schottky Diode

Electrical Characteristics
Symbol Parameter
Typ.
Max. Unit
Test Conditions
V_F
Forward Voltage
1.5
2.2
1.8
3
V
I_F = 20 AT_J=25°C
I_F = 20 AT_J=175°C
I_R
Reverse Current
35
65
200
400
μA
V_R = 1200 VT_J=25°C
V_R = 1200 VT_J=175°C
Q_C
Total Capacitive Charge
99
V_R = 800 V, I_F = 20A
nC di/dt = 200 A/μs
T_J = 25°C
C
Total Capacitance
1500
93
67
V_R = 0 V, T_J = 25°C, f = 1 MHz
pF V_R = 400 V, T_J = 25˚C, f = 1 MHz
V_R = 800 V, T_J = 25˚C, f = 1 MHz
Note:
1. This is a majority carrier diode, so there is no reverse recovery charge.
Thermal Characteristics
Note
Symbol
Parameter
R_θJC
Thermal Resistance from Junction
to Case
Typ.
0.62
Max.
Unit
°C/W
Test Conditions
Note
Typical Performance
40
35
T_J=-55°C
T_J= 25°C
T_J= 75°C
T_J =125°C
30
T_J =175°C
25
20
15
10
5
0
0
1
2
3
4
V_F (V)
Figure 1. Forward Characteristics
1
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0
T_J=-55°C
T_J= 25°C
T_J= 75°C
T_J =125°C
T_J =175°C
500
1000
V_R (V)
1500
Figure 2. Reverse Characteristics
2
C4D20120A Rev. C