C4D15120D Datasheet, PDF (4/6 Pages) Cree, Inc – Silicon Carbide Schottky Diode

Typical Performance
20₂.₀0
18₁.₈0
16₁.₆0
14₁.₄0
12₁.₂0
10₁.₀0
8.₈0
6.₆0
4.₄0
2.₂0
0.₀0
0₀ 2₂0₀0₀ 4₄0₀₀0 6₆0₀₀08₈₀0₀0 1₁0₀0₀0₀
V_R Rev_Ver_Rse₍V_Vol₎tage (V)
Figure 7. Typical Capacitance Stored Energy, per leg
1
0.5
0.3
100E-3
0.1
0.05
0.02
10E-3
0.01
SinglePulse
1¹⁰0⁰0⁰0
1₁0₀0₀
T_J = 25°C
T_J = 110°C
10₀
11E.E--0055 11E.E--004 11E.E--003 1E1-.E0-202
t_p (s^t)^p(s)
Figure 8. Non-repetitive Peak Forward Surge Current
vs. Pulse Duration (sinusoidal waveform), per leg
1E-3
1E-6
10E-6
100E-6
1E-3
10E-3
100E-3
1
t (sec)
Figure 9. Device Transient Thermal Impedance
4
C4D15120D Rev. –, 09-2015