C4D15120D Datasheet, PDF (1/6 Pages) Cree, Inc – Silicon Carbide Schottky Diode

C4D15120D
Silicon Carbide Schottky Diode
Z-Rec^® Rectifier
V_RRM
= 1200 V
I_F (T_C=135˚C) =   24 A^**
Q_c =   74 nC^**
Features
• 1.2-KVolt Schottky Rectifier
• Zero Reverse Recovery Current
• High-Frequency Operation
• Temperature-Independent Switching Behavior
• Positive Temperature Coefficient on V_F
Benefits
• Replace Bipolar with Unipolar Rectifiers
• Essentially No Switching Losses
• Higher Efficiency
• Reduction of Heat Sink Requirements
• Parallel Devices Without Thermal Runaway
Package
TO-247-3
Applications
• Solar Inverters
• UPS
• Motor Drives
Part Number
C4D15120D
Package
TO-247-3
Marking
C4D15120
Maximum Ratings (TC=25°C unless otherwise specified)
Symbol
Parameter
Value
Test Conditions
Note
V_RRM
Repetitive Peak Reverse Voltage
1200
V
V_RSM
Surge Peak Reverse Voltage
1300
V
V_DC
DC Blocking Voltage
I_F
Continuous Forward Current
(Per Leg/Device)
I_FRM
Repetitive Peak Forward Surge Current
I_FSM
Non-Repetitive Peak Forward Surge Current
I_F,Max
Non-Repetitive Peak Forward Current
P_tot
Power Dissipation(Per Leg/Device)
T_J
Operating Junction Range
1200
V
24.5/49
12/24
7.5/15
38*
25*
66*
49.5*
600*
480*
135/270
58.5/117
T_C=25˚C
A T_C=135˚C
T_C=157˚C
A
T_C=25˚C, t_P=10 ms, Half Sine Pulse
T_C-110˚C, t_P=10 ms, Half Sine Pulse
A
T_C=25˚C, t_P=10 ms, Half Sine Pulse
T_C=110˚C, t_P=10 ms, Half Sine Pulse
A
T_C=25˚C, t_P=10 ms, Pulse
T_C=110˚C, t_P=10 ms, Pulse
W
T_C=25˚C
T_C=110˚C
-55 to +175 ˚C
Fig. 3
Fig. 8
Fig. 8
Fig. 4
T_stg
Storage Temperature Range
TO-247 Mounting Torque
* _{Per Leg,} ** _{Per Device}
-55 to +135 ˚C
1
Nm M3 Screw
8.8
lbf-in 6-32 Screw
1
C4D15120D Rev. –, 09-2015