C4D15120D Datasheet, PDF (2/6 Pages) Cree, Inc – Silicon Carbide Schottky Diode

Electrical Characteristics (Per Leg)
Symbol Parameter
Typ.
Max.
Unit
Test Conditions
V_F
Forward Voltage
1.5
2.2
1.8
3
V
I_F = 8 AT_J=25°C
I_F = 8 AT_J=175°C
I_R
Reverse Current
35
100
250
350
μA
V_R = 1200 V T_J=25°C
V_R = 1200 V T_J=175°C
Q_C
Total Capacitive Charge
V_R = 800 V, I_F = 8 A
37
nC di/dt = 200 A/μs
T_J = 25°C
C
Total Capacitance
560
V_R = 0 V, T_J = 25°C, f = 1 MHz
37
pF V_R = 400 V, T_J = 25˚C, f = 1 MHz
27
V_R = 800 V, T_J = 25˚C, f = 1 MHz
E_C
Capacitance Stored Energy
3.65
μJ V_R = 400 V
Note:This is a majority carrier diode, so there is no reverse recovery charge.
Thermal Characteristics
Symbol
Parameter
R_θJC
Thermal Resistance from Junction to Case
* _{Per Leg,} ** _{Per Device}
Typ.
1.11^*
0.56^**
Max.
Unit
°C/W
Note
Fig. 9
Note
Fig. 1
Fig. 2
Fig. 5
Fig. 6
Fig. 7
Typical Performance
14
T_J=-55°C
12
T_J= 25°C
T_J= 75°C
T_J =125°C
T_J =175°C
10
8
6
4
2
0
0
0.5
1
1.5
2
2.5
3
3.5
4
V_F (V)
Figure 1. Forward Characteristics
800
700
600
500
400
300
T_J=-55°C
T_J= 25°C
T_J= 75°C
200
T_J =125°C
T_J =175°C
100
0
0
500
1000
1500
2000
V_R (V)
Figure 2. Reverse Characteristics
2
C4D15120D Rev. –, 09-2015