CMPA2060025D Datasheet, PDF (2/7 Pages) Cree, Inc – 25 W, 2.0 - 6.0 GHz, GaN MMIC, Power Amplifier

Absolute Maximum Ratings (not simultaneous) at 25˚C
Parameter
Symbol
Rating
Drain-source Voltage
Gate-source Voltage
Storage Temperature
Operating Junction Temperature
Thermal Resistance, Junction to Case (packaged)¹
Mounting Temperature (30 seconds)
V_DSS
V_GS
T_STG
T_J
R_θJC
T_S
84
-10, +2
-55, +150
225
2.3
320
Note¹ Eutectic die attach using 80/20 AuSn solder mounted to a 40 mil thick CuW carrier.
Units
VDC
VDC
˚C
˚C
˚C/W
˚C
Electrical Characteristics (Frequency = 2.0 GHz to 6.0 GHz unless otherwise stated; T_C = 25˚C)
Characteristics
DC Characteristics
Gate Threshold Voltage
Gate Quiescent Voltage
Saturated Drain Current¹
Drain-Source Breakdown Voltage
RF Characteristics^2,3
Small Signal Gain
Input Return Loss
Output Return Loss
Power Output, 1
Power Output, 2
Power Output, 3
Power Added Efficiency, 1
Symbol
V_(GS)TH
V_(GS)Q
I_DS
V_BD
S21
S11
S22
P_OUT1
P_OUT2
P_OUT3
PAE1
Min.
-3.8
–
9.3
84
–
–
–
18
14
17
19
Typ.
-3.0
-2.7
13.1
100
25
7
7
28
24
27
41
Max.
-2.3
–
–
–
–
–
–
–
–
–
–
Power Added Efficiency, 2
PAE2
34
45
–
Power Added Efficiency, 3
Power Gain
Output Mismatch Stress
PAE3
15
G_P
–
VSWR
–
30
–
19
–
–
5:1
Notes:
1 _{Scaled from PCM data.}
2 _{All data pulse tested on-wafer with Pulse Width = 10 μs, Duty Cycle = 0.1%.}
3 _{Data measured into an output load with a 15 dB maximum return loss.}
Units
Conditions
V
VDC
A
V
V_DS = 10 V, I_D = 13.4 mA
V_DD = 28 V, I_DQ = 1200 mA
V_DS = 6.0 V, V_GS = 2.0 V
V_GS = -8 V, I_D = 13.4 mA
dB
V_DD = 28 V, I_DQ = 1200 mA
dB
V_DD = 28 V, I_DQ = 1200 mA
dB
V_DD = 28 V, I_DQ = 1200 mA
W
V_DD = 28 V, I_DQ = 1200 mA,
P_IN = 23 dBm, Freq = 2.5 GHz
W
V_DD = 28 V, I_DQ = 1200 mA,
P_IN = 21 dBm, Freq = 3.5 GHz
W
V_DD = 28 V, I_DQ = 1200 mA,
P_IN = 28 dBm, Freq = 5.5 GHz
%
V_DD = 28 V, I_DQ = 1200 mA,
P_IN = 23 dBm, Freq = 2.5 GHz
%
V_DD = 28 V, I_DQ = 1200 mA,
P_IN = 21 dBm, Freq = 3.5 GHz
%
V_DD = 28 V, I_DQ = 1200 mA,
P_IN = 28 dBm, Freq = 5.5 GHz
dB
V_DD = 28 V, I_DQ = 1200 mA
No damage at all phase angles,
Y
V_DD = 28 V, I_DQ = 1200 mA,
P_OUT = 25W CW
Copyright © 2010-2012 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree
and the Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their
respective owners and do not imply specific product and/or vendor endorsement, sponsorship or association.
2
CMPA2060025D Rev 1.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: [phone]
Fax: [phone]
www.cree.com/wireless