CMPA2060025D Datasheet, PDF (1/7 Pages) Cree, Inc – 25 W, 2.0 - 6.0 GHz, GaN MMIC, Power Amplifier

CMPA2060025D
25 W, 2.0 - 6.0 GHz, GaN MMIC, Power Amplifier
Cree’s CMP2060025D is a gallium nitride (GaN) High Electron Mobility
Transistor (HEMT) based monolithic microwave integrated circuit
(MMIC). GaN has superior properties compared to silicon or gallium
arsenide, including higher breakdown voltage, higher saturated
electron drift velocity and higher thermal conductivity. GaN HEMTs
also offer greater power density and wider bandwidths compared to
Si and GaAs transistors. This MMIC contains a two-stage reactively
matched amplifier design approach enabling very wide bandwidths to
be achieved.
PN: _CMPA2060025D
Typical Performance Over 2.0-6.0 GHz (T_C = 25˚C)
Parameter
2.0 GHz 3.0 GHz 4.0 GHz 5.0 GHz 6.0 GHz Units
Small Signal Gain
31
33
27
23
27
dB
Saturated
Output
Power,
P1
SAT
29
26
38
27
45
W
Power Gain @ P_OUT = 44 dBm
23
23
18
16
18
dB
PAE @ P_OUT 44 dBm
42
40
50
28
38
%
Note¹: P_SAT is defined as the RF output power where the device starts to draw positive gate current in the range of 2-8 mA. Typical
Data with 50Ω output load. Output transformer can improve performance.
Features
Applications
• 21 dB Small Signal Gain
• 23 W Typical P_SAT
• Operation up to 28 V
• High Breakdown Voltage
• High Temperature Operation
• Size 0.142 x 0.144 x 0.004 inches
• Ultra Broadband Drivers
• Fiber Drivers
• Test Instrumentation
• EMC Amplifier Drivers
Subject to change without notice.
www.cree.com/wireless
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