CMPA0060025F Datasheet, PDF (2/11 Pages) Cree, Inc – 25 W, 20 MHz-6000 MHz, GaN MMIC Power Amplifier

Absolute Maximum Ratings (not simultaneous) at 25˚C
Parameter
Symbol
Drain-source Voltage
Gate-source Voltage
Storage Temperature
Operating Junction Temperature
Maximum Forward Gate Current
Soldering Temperature¹
Screw Torque
V_DSS
V_GS
T_STG
T_J
I_GMAX
T_S
τ
Thermal Resistance, Junction to Case
R_θJC
Case Operating Temperature^2,3
T_C
Note:
1 _{Refer to the Application Note on soldering at www.cree.com/RF/Document-Library}
2 _{Measured for the CMPA0060025F at PIN = 32 dBm.}
Rating
84
-10, +2
-65, +150
225
4
245
40
3.3
-40, +150
Electrical Characteristics (Frequency = 20 MHz to 6.0 GHz unless otherwise stated; T_C = 25˚C)
Units
VDC
VDC
˚C
˚C
mA
˚C
in-oz
˚C/W
˚C
Characteristics
DC Characteristics
Symbol
Min.
Typ.
Max.
Units
Conditions
Gate Threshold Voltage²
V_(GS)TH
-3.8
-3.0
-2.3
V
V_DS = 20 V, ∆I_D = 20 mA
Gate Quiescent Voltage
V_(GS)Q
–
-2.7
–
VDC
V_DD = 50 V, I_DQ = 500 mA, P_IN = 32 dBm
Saturated Drain Current
RF Characteristics¹
I_DC
–
12
–
A
V_DS = 12 V, V_GS = 2.0 V
Power Output at P_OUT @ 4.5 GHz
P_OUT1
41.0
42.8
–
dBm
V_DD = 50 V, I_DQ = 500 mA, P_IN = 32 dBm
Power Output at P_OUT @ 5.0 GHz
P_OUT2
41.0
43.3
–
dBm
V_DD = 50 V, I_DQ = 500 mA, P_IN = 32 dBm
Power Output at P_OUT @ 6.0 GHz
P_OUT3
41.0
42.9
–
dBm
V_DD = 50 V, I_DQ = 500 mA, P_IN = 32 dBm
Drain Efficiency at P_OUT @ 4.5 GHz
η1
18.0
24.1
–
%
V_DD = 50 V, I_DQ = 500 mA, P_IN = 32 dBm
Drain Efficiency at P_OUT @ 5.0 GHz
η2
18.0
28.0
–
%
V_DD = 50 V, I_DQ = 500 mA, P_IN = 32 dBm
Drain Efficiency at P_OUT @ 6.0 GHz
Output Mismatch Stress
Small Signal RF Characteristics
Frequency
Min.
η3
18.0
VSWR
–
S21
Typ.
Max.
Min.
27.2
–
S11
Typ.
–
%
V_DD = 50 V, I_DQ = 500 mA, P_IN = 32 dBm
No damage at all phase angles,
5:1
Y
V_DD = 50 V, I_DQ = 500 mA, P_IN = 32 dBm
S22
Max.
Min.
Typ.
Max. Conditions
0.02 GHz - 0.25 GHz
18.0
19.3
23.7
–
-4.1
-2.5
–
-8.5
-4.5
V_DD = 50 V, I_DQ = 500 mA
0.25 GHz - 0.5 GHz
18.0
19.8
22.0
–
-6.8
-3.5
–
-8.9
-4.5
V_DD = 50 V, I_DQ = 500 mA
0.5 GHz - 1.0 GHz
15.5
18.6
22.0
–
-15.3
-6.5
–
-6.7
-4.5
V_DD = 50 V, I_DQ = 500 mA
1.0 GHz - 2.0 GHz
15.5
18.6
22.0
–
-15.3
-12.5
–
-6.7
-4.5
V_DD = 50 V, I_DQ = 500 mA
2.0 GHz - 3.0 GHz
13.0
18.6
20.0
–
-15.3
-12.5
–
-6.0
-2.5
V_DD = 50 V, I_DQ = 500 mA
3.0 GHz - 6.0 GHz
13.0
16.3
20.0
–
-14.2
-6.5
–
Notes:
1 _{POUT is defined as PIN = 32 dBm.}
2 _{The device will draw approximately 55-70 mA at pinch off due to the internal circuit structure.}
-5.3
-2.5
V_DD = 50 V, I_DQ = 500 mA
Copyright © 2009-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific
product and/or vendor endorsement, sponsorship or association.
2
CMPA0060025F Rev 4.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: [phone]
Fax: [phone]
www.cree.com/rf