CMPA0060025F Datasheet, PDF (1/11 Pages) Cree, Inc – 25 W, 20 MHz-6000 MHz, GaN MMIC Power Amplifier

CMPA0060025F
25 W, 20 MHz-6000 MHz, GaN MMIC Power Amplifier
Cree’s CMPA0060025F is a gallium nitride (GaN) High Electron Mobility Transistor
(HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior
properties compared to silicon or gallium arsenide, including higher breakdown
voltage, higher saturated electron drift velocity and higher thermal conductivity.
GaN HEMTs also offer greater power density and wider bandwidths compared
to Si and GaAs transistors. This MMIC enables extremely wide bandwidths to be
achieved in a small footprint screw-down package.
PaPckNa:gCeMTPyApe0:076800002159F
Typical Performance Over 20 MHz - 6.0 GHz (T_C = 25˚C)
Parameter
Gain
Output Power @ P_IN = 32 dBm
Power Gain @ P_IN = 32 dBm
Efficiency @ P_IN = 32 dBm
Note¹: V_DD = 50 V, I_DQ = 500 mA
20 MHz
21.4
26.9
12.3
63
0.5 GHz
20.1
30.2
12.8
55
1.0 GHz
19.3
26.3
12.2
40
2.0 GHz
16.7
23.4
11.7
31
3.0 GHz
16.6
24.5
11.9
33
4.0 GHz
16.8
24.0
11.8
31
5.0 GHz
15.7
20.9
11.3
28
6.0 GHz
15.5
18.6
10.7
26
Units
dB
W
dB
%
Features
• 17 dB Small Signal Gain
• 25 W Typical P_SAT
• Operation up to 50 V
• High Breakdown Voltage
• High Temperature Operation
• 0.5” x 0.5” total product size
Applications
• Ultra Broadband Amplifiers
• Test Instrumentation
• EMC Amplifier Drivers
Subject to change without notice.
www.cree.com/wireless
Figure _1.
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