CMPA601C025D Datasheet, PDF (1/6 Pages) Cree, Inc – 25 W, 6.0 - 12.0 GHz, GaN MMIC, Power Amplifier

CMPA601C025D
25 W, 6.0 - 12.0 GHz, GaN MMIC, Power Amplifier
Cree’s CMPA601C025D is a gallium nitride (GaN) High Electron Mobility
Transistor (HEMT) based monolithic microwave integrated circuit (MMIC)
on a silicon carbide substrate, using a 0.25 μm gate length fabrication
process. GaN-on-SiC has superior properties compared to silicon,
gallium arsenide or GaN-on-Si, including higher breakdown voltage,
higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater
power density and wider bandwidths compared to Si, GaAs, and GaN-on-Si transistors. This MMIC
contains a reactively matched amplifier design approach enabling very wide bandwidths to be achieved.
Typical Performance Over 6.0-12.0 GHz (T_C = 25˚C)
Parameter
6.0 GHz
8.0 GHz
Small Signal Gain
40.0
42.0
P_OUT @ P_IN = 19 dBm
P_OUT @ P_IN = 19 dBm
Power Gain @ P_IN = 19 dBm
PAE @ P_IN = 19 dBm
48.0
63.0
29.0
33.0
49.0
79.0
30.0
49.0
10.0 GHz
43.0
47.4
55.0
28.4
35.0
12.0 GHz
36.0
47.3
54.0
27.3
32.0
Units
dB
dBm
W
dB
%
Note: All data pulse tested on-wafer with Pulse Width = 10 μs, Duty Cycle = 0.1%.
Features
Applications
• 32 dB Small Signal Gain
• 30 W Typical P_SAT
• Operation up to 28 V
• High Breakdown Voltage
• High Temperature Operation
• Size 0.172 x 0.239 x 0.004 inches
• Jamming Amplifiers
• Test Equipment Amplifiers
• Broadband Amplifiers
• Radar Amplifiers
Subject to change without notice.
www.cree.com/rf
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