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| BDX66_12 Datasheet, PDF (3/4 Pages) Comset Semiconductor – PNP SILICON DARLINGTON POWER TRANSISTOR | |||
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BDX66 â A â B â C
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s)
Min Typ Max Unit
BDX66
-VCE(SAT)
Collector-Emitter saturation
Voltage (*)
-IC=10 A
-IB=40 mA
BDX66A
BDX66B
-
-
2
V
BDX66C
BDX66
-VBE
Base-Emitter Voltage(1&2)
-VCE=3 V
-IC=10 A
BDX66A
BDX66B
-
- 2,5 V
BDX66C
BDX66
VF
Diode forward voltage
IF=10 A
BDX66A
BDX66B
-
2
-
V
BDX66C
C22b
IE=0 A, -VCB=-10V
f=1 MHz
- 300 - pF
ton
toff
Switching characteristics
VCC=12V, -IC=10 A
-IB1= IB2=40 mA
-
-
1
3.5
-
-
µs
BDX66
fhfe
-VCE=3 V,-IC=5 A
BDX66A
BDX66B
-
60
- kHz
BDX66C
(*) Pulse Width â 300 µs, Duty Cycle â 2.0%
24/10/2012
COMSET SEMICONDUCTORS
3/4
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