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BDX66_12 Datasheet, PDF (2/4 Pages) Comset Semiconductor – PNP SILICON DARLINGTON POWER TRANSISTOR
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BDX66 – A – B – C
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s)
Min Typ Max Unit
-VCEO(SUS)
Collector-Emitter Breakdown -IC=0.1 A
Voltage (*)
L=25mH
-ICEO
Collector Cutoff Current
-VCE=30 V
-VCE=40 V
-VCE=50 V
-VCE=60 V
-IEBO
Emitter Cutoff Current
-VBE=5 V
-ICBO
Collector-Base Cutoff
Current
-VCB=60 V
-VCB=40 V
TCASE=200°C
-VCB=80 V
-VCB=50 V
TCASE=200°C
-VCB=100 V
-VCB=60 V
TCASE=200°C
-VCB=120 V
-VCB=70 V
TCASE=200°C
-VCE=3 V
- IC=1 A
hFE
DC Current Gain
-VCE=3 V
- IC=10 A
-VCE=3 V
- IC=16 A
BDX66
60 -
-
BDX66A 80 -
BDX66B 100 -
-
-
V
BDX66C 120 -
-
BDX66
-
-
BDX66A -
BDX66B -
-
-
3 mA
BDX66C -
-
BDX66
BDX66A
BDX66B
-
- 5.0 mA
BDX66C
-
-
1
BDX66
-
-
5
-
-
1
BDX66A
-
-
5
-
-
1 mA
BDX66B
-
-
5
-
-
1
BDX66C
-
-
5
BDX66
BDX66A
BDX66B
- 2000 -
BDX66C
BDX66
BDX66A
BDX66B
1000
-
-
-
BDX66C
BDX66
BDX66A
BDX66B
- 1000 -
BDX66C
24/10/2012
COMSET SEMICONDUCTORS
2/4
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