BDX66_12 Datasheet, PDF (1/4 Pages) Comset Semiconductor – PNP SILICON DARLINGTON POWER TRANSISTOR

BDX66 – A – B – C
PNP SILICON DARLINGTON POWER TRANSISTOR
The BDX66, BDX66A, BDX66B and BDX66C are mounted in TO-3 metal package.
High current power darlingtons designed for power amplification and switching applications.
The complementary NPN are BDX67, BDX67A, BDX67B, BDX67C.
Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
-V_CEO
Collector-Emitter Voltage
-V_CBO
-V_EBO
-I_C
-I_B
P_T
T_J
T_S
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Base Current
Power Dissipation
Junction Temperature
Storage Temperature
-I_C(RMS)
-I_CM
@ T_C = 25°
Value
BDX66
BDX66A
BDX66B
BDX66C
BDX66
BDX66A
BDX66B
BDX66C
60
80
100
120
60
80
100
120
5.0
16
20
0.25
150
-55 to +200
Unit
V
V
V
A
A
W
°C
THERMAL CHARACTERISTICS
Symbol
Ratings
R_thJ-C
Thermal Resistance, Junction to Case
Value
1.17
Unit
°C/W
24/10/2012
COMSET SEMICONDUCTORS
1/4