BDX62_12 Datasheet, PDF (3/4 Pages) Comset Semiconductor – PNP SILICON DARLINGTON POWER TRANSISTOR

BDX62 – A – B – C
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s)
Min Typ Max Unit
BDX62
f_hfe
Cut-off frequency
V_CE=3 V
IC^{=3 A}
BDX62A
BDX62B
- 100 - kHz
BDX62C
BDX62
f_T
Transition Frequency
V_CE=-3 V, I_C=-3 A
f=1 MHz
BDX62A
BDX62B
-
7
- MHz
BDX62C
BDX62
V_CE=-3 V, I_C=-0.5 A
BDX62A
BDX62B
- 1500 -
BDX62C
BDX62
h_FE
D.C. current gain (*)
V_CE=-3 V, I_C=-3 A
BDX62A
BDX62B
1000
-
-
-
BDX62C
BDX62
V_CE=-3 V, I_C=-8 A
BDX62A
BDX62B
- 750 -
BDX62C
(*) Pulse Width ≈ 300 µs, Duty Cycle ∠ 2.0%
24/10/2012
COMSET SEMICONDUCTORS
3|4