BDX62_12 Datasheet, PDF (1/4 Pages) Comset Semiconductor – PNP SILICON DARLINGTON POWER TRANSISTOR

BDX62 – A – B – C
PNP SILICON DARLINGTON POWER TRANSISTOR
The BDX62, BDX62A, BDX62B and BDX62C are mounted in TO-3 metal package.
High current power darlingtons designed for power amplification and switching applications.
The complementary NPN are BDX63, BDX63A, BDX63B, BDX63C.
Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
V_CEO
Collector-Emitter Voltage
V_CEV
V_EBO
I_C
I_B
P_T
T_J
T_S
Collector-EmitterVoltage
Emitter-Base Voltage
Collector Current
Base Current
Power Dissipation
Junction Temperature
Storage Temperature
V_BE=-1.5 V
I_C(RMS)
I_CM
@ T_C = 25°
THERMAL CHARACTERISTICS
Symbol
Ratings
R_thJ-C
Thermal Resistance, Junction to Case
BDX62
BDX62A
BDX62B
BDX62C
BDX62
BDX62A
BDX62B
BDX62C
Value
-60
-80
-100
-120
-60
-80
-100
-120
-5.0
-8
-12
-0.15
90
-55 to +200
Unit
V
V
V
A
A
W
°C
Value
1.94
Unit
°C/W
24/10/2012
COMSET SEMICONDUCTORS
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