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BDX62_12 Datasheet, PDF (2/4 Pages) Comset Semiconductor – PNP SILICON DARLINGTON POWER TRANSISTOR
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BDX62 – A – B – C
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s) Min Typ Max Unit
VCEO(SUS)
ICEO
Collector-Emitter Breakdown
Voltage (*)
Collector Cutoff Current
IC=-0.1 A
IB=0
L=25mH
VCE=-30 V
VCE=-40 V
VCE=-50 V
VCE=-60 V
IEBO
Emitter Cutoff Current
VBE=-5 V
BDX62 -60 -
-
BDX62A -80 -
BDX62B -100 -
-
-
V
BDX62C -120 -
-
BDX62
-
-
BDX62A -
BDX62B -
-
-
-0.5 mA
BDX62C -
-
BDX62
BDX62A
BDX62B
-
- -5.0 mA
BDX62C
VCBO=-60 V
VCBO=-40 V
TCASE=200°C
BDX62
-
- -0.2
-
-
-2
VCBO=-80 V
-
ICBO
VCBO=-50 V
Collector-Base Cutoff Current TCASE=200°C
BDX62A
-
VCBO=-100 V
-
VCBO=-60 V
TCASE=200°C
BDX62B
-
VCBO=-120 V
-
VCBO=-70 V
TCASE=200°
BDX62C
-
BDX62
VCE(SAT)
Collector-Emitter saturation
Voltage (*)
IC=-3.0 A
IB=-12 mA
BDX62A
BDX62B
-
BDX62C
BDX62
VF
Forward Voltage (pulse
method)
IF=3 A
BDX62A
BDX62B
-
BDX62C
BDX62
VBE
Base-Emitter Voltage (*)
IC=-3.0 A
VCE=-3V
BDX62A
BDX62B
-
BDX62C
- -0.2
-
-2
-
- -0.2
-
-2
- -0.2
-
-2
-
-2
V
- -2.5 V
-
-
V
24/10/2012
COMSET SEMICONDUCTORS
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