BDX33_12 Datasheet, PDF (3/4 Pages) Comset Semiconductor – COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

NPN BDX33 – BDX33A – BDX33B – BDX33C
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s)
Min Typ Max Unit
V_CBO=45 V
T_C=100°C
BDX33
-
-
V_CBO=60 V
I_CBO
Collector-Base Cutoff
Current
T_C=100°C
V_CBO=80 V
T_C=100°C
BDX33A -
-
5 mA
BDX33B -
-
V_CBO=100 V
T_C=100°C
BDX33C -
-
BDX33
V_CE(SAT)
Collector-Emitter
saturation Voltage (*)
I_C=4.0 A, I_B=8.0 mA
BDX33A
BDX33B
-
BDX33C
BDX33
- 2.5
V
I_C=3.0 A, I_B=6.0 mA
BDX33A
BDX33B
-
- 2.5
BDX33C
BDX33
V_F
Forward Voltage (pulse
method)
I_F=8 A
BDX33A
BDX33B
-
- 4.0 V
BDX33C
V_BE
Base-Emitter Voltage (*)
I_C=4.0 A, V_CE=3.0V
BDX33
BDX33A
-
I_C=3.0 A, V_CE=3.0V
BDX33B
BDX33C
-
- 2.5
V
- 2.5
h_FE
DC Current Gain (*)
V_CE=3.0 V, I_C=4.0 A
BDX33
BDX33A
750
-
V_CE=3.0 V, I_C=3.0 A
BDX33B
BDX33C
750
-
-
-
-
(*) Pulse Width ≈ 300 µs, Duty Cycle ∠ 2.0%
23/10/2012
COMSET SEMICONDUCTORS
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