BDX33_12 Datasheet, PDF (1/4 Pages) Comset Semiconductor – COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

NPN BDX33 – BDX33A – BDX33B – BDX33C
COMPLEMENTARY SILICON POWER DARLINGTON
TRANSISTORS
The BDX33B, BDX33B and BDX33C are silicon epitaxial-base NPN power transistors in
monolithic Darlington configuration and are mounted in Jedec TO-220 plastic package.
They are intented for use in power linear and switching applications.
The complementary PNP types are the BDX34A, BDX34B and BDX34C respectively.
Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
V_CEO
Collector-Emitter Voltage I_B=0
V_CBO
I_C
I_B
P_T
T_J
T_S
Collector-Base Voltage I_E=0
Collector Current
Base Current
Power Dissipation
Junction Temperature
Storage Temperature
I_C(RMS)
I_CM
@ T_C = 25°
BDX33
BDX33A
BDX33B
BDX33C
BDX33
BDX33A
BDX33B
BDX33C
Value
45
60
80
100
45
60
80
100
10
15
0.25
70
-65 to +150
Unit
V
V
A
A
W
°C
THERMAL CHARACTERISTICS
Symbol
Ratings
R_thJ-C
Thermal Resistance, Junction to Case
Value
1.78
Unit
°C/W
23/10/2012
COMSET SEMICONDUCTORS
1/4