 English |
|
|
|
|
|
|
|
| BDX33_12 Datasheet, PDF (2/4 Pages) Comset Semiconductor – COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS | |||
| |||
| ◁ |
NPN BDX33 â BDX33A â BDX33B â BDX33C
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
VCEO(SUS)
Collector-Emitter
Breakdown Voltage (*)
VCER(SUS)
Collector-Emitter
Sustaining Voltage (*)
VCEV(SUS)
Collector-Emitter
Sustaining Voltage (*)
ICEO
Collector Cutoff Current
IEBO
Emitter Cutoff Current
ICBO
Collector-Base Cutoff
Current
Test Condition(s)
Min Typ Max Unit
BDX33
45 -
-
IC=100 mA
BDX33A 60 -
BDX33B 80 -
-
-
V
BDX33C 100 -
-
BDX33
45 -
-
IB=100 mA,
RBE=100â¦
BDX33A 60 -
BDX33B 80 -
-
-
V
BDX33C 100 -
-
BDX33
45 -
-
IC=100 mA
VBE=-1.5 V
BDX33A 60 -
BDX33B 80 -
-
-
V
BDX33C 100 -
-
VCB=22V
BDX33
-
-
VCB=30V
VCB=40V
BDX33A -
BDX33B -
-
-
0.5
VCB=50V
BDX33C -
-
VCB=22V, TC=100°C BDX33
-
-
mA
VCB=30V, TC=100°C BDX33A
-
VCB=40V, TC=100°C BDX33B
-
-
-
10
VCB=50V, TC=100°C BDX33C
-
-
BDX33
BDX33A
BDX33B
VBE=-5 V
BDX33C
BDX33
-
- 5.0 mA
BDX33A
BDX33B
BDX33C
VCBO=45 V
BDX33
-
-
VCBO=60 V
VCBO=80 V
BDX33A -
BDX33B -
-
-
0.2 mA
VCBO=100 V
BDX33C -
-
23/10/2012
COMSET SEMICONDUCTORS
2/4
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese