BDT81_12 Datasheet, PDF (3/4 Pages) Comset Semiconductor – SILICON POWER TRANSISTORS

NPN BDT81 – BDT83 – BDT85 – BDT87
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
I_S/B
Second breakdown
collector current
f_T
Transition frequency
t_on
Turn-on time
T_off
Turn-off time
Test Condition(s)Sec
V_CE= 50 V, t_P = 100 ms
V_CE= 10 V, I_C= 0.5 A, f=1 MHz
I_C= -7 A
I_B1 = -I_B2 = 0.7 A
(*) Pulse Duration = 300 µs, δ <= 2%
Min Typ Max Unit
2.5 -
- 20
-
-
-
-
-
A
- MHz
1
2
µs
09/11/2012
COMSET SEMICONDUCTORS
3|4