BDT81_12 Datasheet, PDF (1/4 Pages) Comset Semiconductor – SILICON POWER TRANSISTORS

NPN BDT81 – BDT83 – BDT85 – BDT87
SILICON POWER TRANSISTORS
The BDT81 – BDT83 – BDT85 – BDT87 are epitaxial base transistors in a TO-220 plastic
envelope.
They are intended for use in audio output stages and general amplifier and switching
appications.
PNP complements are BDT82 – BDT84 – BDT86 – BDT88.
Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
V_CEO
Collector-Emitter Voltage I_B = 0
V_CBO
Collector-Base Voltage
I_E = 0
V_EBO
I_C
I_CM
I_B
P_t
T_J
T_Stg
Emitter-Base Voltage
Collector Current
Collector Peak Current
Base Current
Total Power Dissipation
Junction Temperature
Storage Temperature
I_C = 0
@ TC = 25°
THERMAL CHARACTERISTICS
Value
BDT81
BDT83
BDT85
BDT87
BDT81
BDT83
BDT85
BDT87
60
80
100
120
60
80
100
120
7
15
20
4
125
150
-65 to +150
Unit
V
V
V
A
A
A
W
°C
°C
Symbol
Ratings
R_thJa
R_thJmb
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Mounting Base
09/11/2012
COMSET SEMICONDUCTORS
Value
70
1
Unit
K/W
K/W
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