 English |
|
|
|
|
|
|
|
| BDT81_12 Datasheet, PDF (2/4 Pages) Comset Semiconductor – SILICON POWER TRANSISTORS | |||
| |||
| ◁ |
NPN BDT81 â BDT83 â BDT85 â BDT87
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
ICB0
Collector Cutoff Current
ICES
Collector Cutoff Current
IEBO
Emitter Cutoff Current
hFE
DC Current Gain (*)
VCE(SAT)
Collector-Emitter
Saturation Voltage (*)
VBE
Base-Emitter Voltage (*)
Test Condition(s)
Min Typ Max Unit
IE=0A, VCB = 60 V
BDT81
IE=0A, VCB = 80 V
IE=0A, VCB = 100 V
BDT83
BDT85
-
- 0.2 mA
IE=0A, VCB = 120 V
BDT87
VBE=0, VCE = 60V
BDT81
VBE=0, VCE = 80V
VBE=0, VCE = 100V
BDT83
BDT85
-
-
1 mA
VBE=0, VCE = 120V
BDT87
BDT81
VEB= 7 V
IC=0
BDT83
BDT85
-
- 0.1 mA
BDT87
BDT81
IC= 50mA
VCE= 10V
BDT83
BDT85
40
-
-
BDT87
BDT81
-
IC= 5A
VCE= 4V
BDT83
BDT85
40
-
-
BDT87
BDT81
IC= 5A
IB= 0.5A
BDT83
BDT85
-
-
1
BDT87
BDT81
V
IC= 5A
IB= 0.5A
BDT83
BDT85
-
- 1.6
BDT87
BDT81
IC= 7A
IB= 0.7A
BDT83
BDT85
-
- 1.5 V
BDT87
09/11/2012
COMSET SEMICONDUCTORS
2|4
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese