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| 2N3789_12 Datasheet, PDF (3/4 Pages) Comset Semiconductor – EPITAXIAL-BASE TRANSISTORS | |||
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PNP 2N3789 â 2N3790 â 2N3791 â 2N3792
ELETRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s)
Min Typ Max Unit
VBE(SAT)
Base-Emitter saturation
Voltage (*) (**)
IC=-5 A, IB=-0.5 A
2N3789
2N3790
-
2N3791
2N3792
-
VBE
Base-Emitter Voltage (*)
(**)
IC=-3 A, VCE=-2V
2N3789
2N3790
-
2N3789
VCE=-10 V, IC=-0.5 A
f=1.0 kHz
2N3790
2N3791
25
hfe
Small Signal Current
Gain
2N3792
2N3789
VCE=-10 V, IC=-0.5 A
f=1.0 MHz
2N3790
2N3791
4
2N3792
-
-2
V
- -1.5
- -1.5 V
- 250 -
-
4
-
(*) Pulse Width â 300 µs, Duty Cycle â 2.0%
(**) These parameters are measured with voltage sensing contacts separate from the current carrying
contacts
05/11/2012
COMSET SEMICONDUCTORS
3|4
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