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| 2N3789_12 Datasheet, PDF (2/4 Pages) Comset Semiconductor – EPITAXIAL-BASE TRANSISTORS | |||
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PNP 2N3789 â 2N3790 â 2N3791 â 2N3792
ELETRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s)
Min Typ Max Unit
VCEO(BR)
Collector-Emitter
Breakdown Voltage
IC=-200 mA, IB=0 (*)
2N3789
2N3791
-60
2N3790
2N3792
-80
-
-
-
-
V
2N3789
VCEO(SUS)
Collector-Emitter
Sustaining Voltage (*)
IC=-200 mA, IB=0 (*)
2N3791 -60
2N3790
2N3792
-80
-
-
-
-
V
Collector-Emitter
ICEO
Current
VCE=-30 V, IB=0
VCE=-40 V, IB=0
2N3789
2N3791
-
2N3790
2N3792
-
- -0.7
mA
- -0.7
VCE=-80 V, VEB=1.5 V
2N3789
2N3791
-
-
-1
ICEV
Collector Cutoff Current
VCE=-100 V, VEB=1.5 V
2N3790
2N3792
-
VCE=-60 V, VEB=1.5 V 2N3789
TC = 150°C
2N3791
-
-
-1
mA
- -10
VCE=-80 V, VEB=1.5 V 2N3790
TC = 150°C
2N3792
-
- -10
2N3713
IEBO
Emitter Cutoff Current VBE=-7 V, IC=0
2N3714
2N3715
-
-
-5 mA
2N3716
IC=-1 A, VCE=-2 V
2N3789
2N3790
25
2N3791
2N3792
50
- 90
- 150
hFE
DC Current Gain (*) (**) IC=-3 A, VCE=-2 V
2N3789
2N3790
15
-
2N3791
2N3792
30
-
-
-
-
2N3789
IC=-10 A, VCE=-4 V
2N3790
2N3791
5
-
-
2N3792
VCE(SAT)
Collector-Emitter
saturation Voltage (*)
(**)
IC=-5 A, IB=-0.5 A
2N3791
-
2N3792
-
-1 V
05/11/2012
COMSET SEMICONDUCTORS
2|4
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