2N3789_12 Datasheet, PDF (1/4 Pages) Comset Semiconductor – EPITAXIAL-BASE TRANSISTORS

PNP 2N3789 – 2N3790 – 2N3791 – 2N3792
EPITAXIAL-BASE TRANSISTORS
The 2N3789, 2N3790, 2N3791 and 2N3792 are silicon epitaxial-base PNP power transistor in
Jedec TO-3 metal case. They are inteded for use in power linear and switching applications.
The 2N3713, 2N3714, 2N3715 and 2N3716 complementary NPN types are respectively.
Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
V_CBO
Collector-BaseVoltage I_E = 0
V_CEO
V_EBO
I_C
I_B
P_D
T_J
T_S
Collector-Emitter
Voltage
I_B = 0
Emitter-Base Voltage
Collector Current
Base Current
I_C = 0
Total Device Dissipation @ T_C = 25°
Junction Temperature
Storage Temperature
THERMAL CHARACTERISTICS
Symbol
Ratings
R_thJC
Thermal Resistance, Junction to Case (Max)
2N3789
2N3791
2N3790
2N3792
2N3789
2N3791
2N3790
2N3792
Value
-80
-100
-60
-80
-7
-10
-4
150
-65 to +200
Unit
V
V
V
A
A
W
°C
Value
1.17
Unit
°C/W
05/11/2012
COMSET SEMICONDUCTORS
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