UPG2181T5R-A Datasheet, PDF (6/24 Pages) California Eastern Labs – Front End Components for, LNAs for L to C-Band Applications

Range Extension Components for 802.15.4/ZigBee Applications
Our Power Amplifiers, LNAs and RFIC Switches are designed to integrate easily with a wide variety of 802.15.4, ZigBee
and Bluetooth transceivers ICs — including CEL’s ZIC24xx MeshConnect transceiver and complete SoC solutions.
LNAs
RFIC Switches
Power
Amplifiers
CEL ZIC24xx
System-on-Chip
802.15.4
Transceiver
Transceiver
UPG2253T6S Front End IC
Front End ICs
UPG2253T6S
LNAs
+19 to +21dBm GaAs RFIC:PA, 2 SPDTs, filter, Tx/Rx bypass path
GaAs MMIC Power Amplifiers
IN
UPG2118K
UPG2250T5N
+31.5 dBm POUT, 50% PAE High Power
RFIC Switches
+20 dBm POUT @ 1.8 VDD, 50% PAE
CEL ZIC24xx
System-on-Chip
802.15.4
UPG2251T6M
+25 dBm POUT @ 3.0 V, 47% PAE, with matching circuit
UPG225x
Transceiver
UPG2314T5N
Front End ICs_{+20 dBm POUT, 65 mA operating current, 50% PAE,}^O₂^U₀^T _{dB variable gain control}
UPG2301T5L
+23 dBm POUT, 50% PAE, 20dB variable gain control
GaAs RFIC SPDT
UPG2012TK/TB
Switches_UPGxxxx
Low^SP3p^To^Sw^wie^tcr^h, ^es^single
Power
controAlmvpollitfaiegres
Low Power
RFIC Switches
UPG2015TB
Medium power, single control voltage, industry-standard package
UPG2422TK
Low insertion loss, high isolation, 1.8-5.3V operation
UPG2179TB
UPG2214TB/TK
UPG2406T6R
Industry’s best medium power SPDT, and most cost-effective
LNAs
1.8 / 3.0 V control voltage, low insertion loss, high isolation
2.4 GHz
Medium power, 1.8 -3.3V control voltage, 0.45 dB Insertion Loss, +22.0 dBm PIN(0.1dB)
UPG2406TK
Medium power, 1.8 -5.3V control voltage, 0.4⁵5^-6d^GB^HzInsertion Loss
UPG2408TK
Medium power, 0.48 dB Insertion Loss, 29dBm PIN(0.1dB)
Transistor & MMIC LNAs
Chipset
Transceiver
NE662M04
NE3508M04
NE3509M04
UPC8233TK
Silicon NPN transistor, 1.3 dB noise figure, 15₂d_.4B_GHg_zain
Ga_CA_hs_oH_oJ_seFET,
super
low
0.45 dB
noise
figure, 14 dB
5 - 6 GHz
gain,
high
linearity
SingR_GlFe_aICoAr_{sSMHwuJitltcF}ihT_EehTsr,o_sw_{uper low 0.45 dB noise figure, 18dB gain, high gain}
SiGe:C MMIC, 1.8 to 3.3 V control voltage, 1.1 dB noise figure, 16.5 dB gain
NESG3031M05/M14
SiGe HBT, 0.6 dB noise figure, 16 dB gain
NESG7030M04¹
SiGe:C HBT, 0.75dB Noise Figure, 14 dB Gain@ 5.8GHz, built-in ESD protection
CEL System-on-Chip Transceiver IC
ZIC2410
RF Transceiver with 8051 MCU:+8 dBm output power, 106 dB link budget, scalable data rates
to 1 Mbps, voice CODEC, 48 pin QFN or 72 pin VFBGA package
Notes: 1. Under development, please inquire
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