UPG2181T5R-A Datasheet, PDF (12/24 Pages) California Eastern Labs – Front End Components for, LNAs for L to C-Band Applications

GaAs Devices: FETs, RFIC LNAs & Power Amplifiers
Low Noise GaAs FETs, 100 MHz to 20 GHz Typical Specifications @ TA = 25°C
Part
Number
Gate Gate
Length Width
(μm) (μm)
NE3503M04 0.2 160
Recommended
Frequency
Range
(GHz)
2 to 18
Test
Frequency
(GHz)
12
NF/GA Bias
VDS
IDS
(V) (mA)
2.0 10
NFOPT
(dB)
0.55
GA
(dB)
11.5
NE3508M04 0.6 800
1 to 6
2
2.0 10 0.40 14.0
NE3509M04 0.6 400
1 to 6
2
2.0 10 0.45 17.5
NE3509M14 0.6 400
1 to 6
2
2.0 10 0.4 18.5
NE3510M04 0.6 280
1 to 6
2
2.0 10 0.35 19.0
NE3511S02 0.2 160
4 to 18
12
2.0 10 0.30 13.5
NE3512S02 0.2 160
4 to 18
12
2.0 10 0.35 13.5
NE3513M04 0.2 160
10 to 14
12
2.0 6 0.45 13.0
NE3514S02 0.2 160
4 to 20
20
2.0 10 0.75 10.0
NE3515S02 0.2 200
NE3516S02¹ 0.2
160
6 to 18
6 to 18
12
2.0 10 0.3 12.5
12
2.0 10 0.35 14.0
NE3517S03 —
160
10 to 26
20
2.0 10 0.7 13.5
NE3519M04 0.6 400
1 to 6
2
2.0 10 0.40 18.5
NE3520S03 —
160
10 to 26
20
2.0 10 0.65 13.5
Notes: 1. Under development, please inquire
Power Bias
VDS
IDS
(V)
(mA)
—
—
3.0
30
3.0
20
2.0
10
3.0
30
—
—
—
—
—
—
—
—
3.0
25
—
—
3.0
15
2.0
10
—
—
P1dB
(dBm)
Chip /
Package
Code
Chip / Package
Description
—
M04
+18.0 M04
+14.0 M04
+11.0 M14
+12.0 M04
—
S02
—
S02
—
M04
—
S02
+14.0 S02
—
S02
+12.0 S03
+11
M04
—
S03
Plastic SMD
Plastic SMD
Plastic SMD
Plastic SMD
Plastic SMD
Micro-X Plastic
Micro-X Plastic
Plastic SMD
Micro-X Plastic
Micro-X Plastic
Plastic SMD
Micro-X Plastic
Plastic SMD
Micro-X Plastic
GaAs RFIC Power Amplifiers for Handset and Wireless Applications
ELECTRICAL CHARACTERISTICS (TA = 25°C)
Part Number
Frequency
Range
(MHz)
Test Conditions
Output Power
(dBm)
Power Added
Efficiency
(%)
UPG2118K
410 to 2500
f = 915 MHz
PIN = 0 dBm
VD = 3.2 V
+31.5 TYP
50 TYP
868 to 2500
UPG2250T5N
868 to 2500
f = 2450 MHz
PIN = 0 dBm
VDD = 1.8 V
f = 2450 MHz
PIN = 0 dBm
VDD = 3.0 V
+20 TYP
+25 TYP
55 TYP
58 TYP
UPG2251T6M 2400 to 2500
f = 2450 MHz
PIN = -5 dBm
VDD = 3.0 V
+25 TYP
47 TYP
UPG2301T5L 868 to 2500
f = 2450 MHz
PIN = +4 dBm
VCC = 3.3 V
+23 TYP
50 TYP
UPG2314T5N 868 to 2500
f = 2450 MHz
PIN = 0 dBm
VCC = 3 V
+20 TYP
50 TYP
Package
Style
Description
3 stage E-Mode
K
Power Amplifier IC
Application
AMR, ISM
1.8 to 3.5 V
T5N
Bluetooth, ZigBee, ISM
Power Amplifier IC
T6M
3.0V Power Amplifier IC
with internal matching
Bluetooth, ZigBee, ISM
T5L 2 stage HBT Power Amplifier Bluetooth, ZigBee, ISM
Low current HBT,
T5N
Bluetooth, ZigBee, ISM
miniature package
12