UPG2181T5R-A Datasheet, PDF (13/24 Pages) California Eastern Labs – Front End Components for, LNAs for L to C-Band Applications

GaAs Devices: Integrated Front End ICs
Front End ICs for Handset and Wireless Applications
Part Number
UPG2253T6S
ELECTRICAL CHARACTERISTICS (TA = 25°C)
Frequency
Range
(MHz)
Test Conditions
Output Power
(dBm)
Power Added
Efficiency
(%)
2400 to 2500
f = 2450 MHz
PIN = 0 dBm
VDD = 3.0 V
+19 to +21 TYP
28 TYP
Package
Style
Description
Application
+19 to +21 dBm GaAs RFIC:
T6S
PA, 2 SPDTs, filter,
Bluetooth, ZigBee, ISM
Tx/Rx bypass path
GaAs CATV Hybrid Amplifiers
Push-Pull CATV Hybrid Amplifiers (VDD = 24V, ZS = ZL = 75 Ω)
Part Number
Frequency
Gain
(MHz, min – max) (dB, min – max)
CTB¹
(dBc, max)
CSO¹
(dBc, max)
X-MOD^1,2
(dBc, max)
NF ³
(dB, max)
IDD
(mA, max)
MC-7831
50 – 870
18.0 – 19.0
-57
-57
-50
7.0
MC-7831-HA
40 – 1000
18.0 – 19.0
-57
-57
-50
7.0
MC-7832
50 – 870
22.0 – 23.0
-57
-57
-50
6.5
MC-7832-HA
40 – 1000
22.0 – 23.0
-57
-57
-50
6.5
MC-7833
50 – 870
25.0 – 26.0
-57
-57
-50
6.0
MC-7834-KC 4
50 – 870
20.0 – 21.0
-59
-59
-52
7.0
MC-7836
50 – 870
27.0 – 28.0
-58
-58
-52
6.0
Notes:
1. Distortion measurements at VOUT = 44 dBm V flat, 110 channels. 2. Measured using EIAJ methods and procedures.
3. Noise Figure measured at 870 MHz. 4. Higher current device for better X-mod and crash point performance.
Power Doubler CATV Hybrid Amplifiers (VDD = 24V, ZS = ZL = 75 Ω)
Part Number
Freqency
Gain
(MHz, min – max) (dB, min – max)
MC-7845 ²
50 – 870
18.0 – 19.0
MC-7846 ²
50 – 870
22.0 – 23.0
MC-7847 ²
50 – 870
25.0 – 26.0
MC-7847-KC ³
50 – 870
25.0 – 26.0
MC-7881 ⁴
50 – 870
18.0 – 19.0
MC-7882 ⁴
50 – 870
20.0 – 21.0
MC-7883 ⁴
50 – 870
22.0 – 23.0
MC-7884 ⁴
50 – 870
25.0 – 26.0
MC-7891⁵
40 – 1000
18.0 – 19.5
MC-7893 ⁵
40 – 1000
22.5 – 24.0
MC-7894 ⁵
40 – 1000
24.5 – 25.5
MC-7896 ⁵
40 – 1000
27.0 – 28.0
CTB
(dBc, typ)
-63
-63
-65
–
–
–
–
–
–
–
–
–
CTB
(dBc,max)
-60
-60
-60
-60
-60
-60
-60
-60
-63
-63
-63
-63
CSO
(dBc, typ)
-68
-67
-67
–
–
–
–
–
–
–
–
–
X-MOD1
(dBc, typ)
-59
-60
-62
–
–
–
–
–
–
–
–
–
X-MOD1
(dBc, max)
-63
-63
-63
-63
-63
-63
-63
-63
-65
-65
-65
-65
Notes:
1. Measured using EIAJ methods and procedures.
2. Distortion measurements are made with 110 channels loading, VOUT = +50 dBmV at 745.25 MHz, 10 dB tilted across the band.
3. Higher current device for better X-mod and crash point performance.
4. Distortion measurements are made with 110 channels loading, VOUT = +52 dBmV at 745.25 MHz, 10 dB tilted across the band.
5. Distortion measurements are made with 77 channels loading, VOUT = +52 dBmV at 547.25 MHz, 7 dB tilted across the band.
240
240
240
240
240
325
260
IDD
(mA, max)
375
375
375
420
360
360
360
360
385
385
385
385
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