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CMBT2222 Datasheet, PDF (3/4 Pages) Continental Device India Limited – SILICON PLANAR EPITAXIAL TRANSISTORS
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CMBT2222
CMBT2222A
D.C. current gain
IC = 0,1 mA; VCE = 10V
hFE
IC = 1 mA; VCE = 10V
hFE
lC = 10 mA; VCE = 10 V
hFE
lC = 10 mA; VCE = 10 V; Tamb = –55 °C hFE
IC = 150mA; VCE = 10V
hFE
IC = 150 mA; VCE = 1 V
hFE
IC = 500 mA; VCE = 10 V
hFE
Transition frequency at f = 100 MHz
IC = 20 mA; VCE = 20 V
fT
Output capacitance at f = 1 MHz
IE = 0; VCB = 10V
Co
Input capacitance at f = 1 MHz
IC = 0; VEB = 0,5V
Ci
Noise figure at RS = 1 kΩ
IC = 100µA; VCE = 10V; f = 1 kHz
F
Switching times (between 10% and 90% levels)
Turn–on time switched to Ic = 150 mA
delay time
td
rise time
tr
Turn–off time switched from Ic = 150 mA
storage time
ts
fall time
tf
Small Signal Current Gain
VCE = 10V; IC = 1 mA; f = 1 KHz
hfe
VCE = 10V; IC = 10mA; f = 1 KHz
hfe
CMBT2222 CMBT2222A
>
35
>
50
>
75
>
35
100 to 300
>
50
>
30
40
>
250
300 MHz
<
8,0
pF
<
30
25 pF
<
4,0
dB
<
10
ns
<
25
ns
<
225
ns
<
60
ns
>
50
<
300
>
75
<
375
Continental Device India Limited
Data Sheet
Page 3 of 4
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