CMBT2222 Datasheet, PDF (1/4 Pages) Continental Device India Limited – SILICON PLANAR EPITAXIAL TRANSISTORS

Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
SOT-23 Formed SMD Package
CMBT2222
CMBT2222A
SILICON PLANAR EPITAXIAL TRANSISTORS
N–P–N silicon transistors
Marking
CMBT2222 = lB
CMBT2222A = lP
PACKAGE OUTLINE DETAILS
ALL DIMENSIONS IN mm
Pin configuration
1 = BASE
2 = EMITTER
3 = COLLECTOR
3
1
2
ABSOLUTE MAXIMUM RATINGS
Collector–base voltage (open ernitter)
Collector–emitter voltage (open base)
Emitter base voltage (open collector)
Collector current (d.c.)
Total power dissipation up to T_amb = 25 °C
D.C. current gain
I_C = 150mA; V_CE = 10V
lC = 500mA; V_CE = 10V
Transition frequency at f = 100 MHz
I_C = 20 mA; V_CE = 20 V
V_CB0
V_CE0
V_EB0
I_C
P_tot
h_FE
h_FE
f_T
CMBT2222 CMBT2222A
max. 60
75 V
max. 30
40 V
max. 5,0
6,0 V
max.
600
mA
max.
250
mW
100 to 300
>
30
40
>
250
300 MHz
Continental Device India Limited
Data Sheet
Page 1 of 4