CMBT2222 Datasheet, PDF (2/4 Pages) Continental Device India Limited – SILICON PLANAR EPITAXIAL TRANSISTORS

CMBT2222
CMBT2222A
RATINGS (at T_A = 25°C unless otherwise specified)
Limiting values
Collector–base voltage (open emitter)
Collector–emitter voltage (open base)
Emitter–base voltage (open collector)
Collector current (d.c,)
Total power dissipation up to T_amb = 25 °C
Storage temperature range
Junction temperature
V_CBO
V_CEO
V_EBO
I_C
P_tot
T_stg
T_j
CMBT2222 CMBT2222A
max. 60
75 V
rnax. 30
40 V
max. 5,0
6,0 V
max.
600
mA
max.
250
mW
–55 to +150
°C
max.
150
°C
THERMAL RESISTANCE
From junction to ambient
R_{th j–a}
500
K/W
CHARACTERISTICS
T_j = 25 °C unless otherwise specified
Collector cut–off current
I_E = 0; V_CB = 50 V
I_E ⁼ 0; V_CB = 60 V
I_E ⁼ 0; V_CB = 50 V; T_i – 125 °C
I_E = 0; V_CB = 60 V; T_j ⁼ 125 °C
V_EB = 3 V; V_CE = 60 V
Base current
with reverse biased emitter junction
V_FB = 3V; V_CE = 60V
Emitter cut–off current
I_C = 0; V_EB = 3V
Saturation voltages
I_C = 150 mA; l_B = 15 mA
I_C = 500 mA; l_B = 50 mA
Breakdown voltages
I_C = 1,0µ A; I_B = 0
I_C = 100µA; I_E = 0
I_C = 0; I_E = 10µA
CMBT2222 CMBT2222A
I_CBO <
0,01
I_CBO <
–
I_CBO <
10
I_CBO <
–
I_CEX < –
–
µA
0,01 µA
–
µA
10 µ A
10 nA
I_BEX <
–
I_EBO <
–
V_CEsat <
400
V_BEsat <
1.3
V_BEsat
–
V_CEsat <
1.6
V_BEsat <
2.6
V_(BR)CEO > 30
V_(BR)CBO > 60
V_(BR)EBO > 5,0
20 nA
10 nA
300 mV
–
V
0,6 to 1,2 V
1.0 V
2.0 V
40 V
75 V
6,0 V
Continental Device India Limited
Data Sheet
Page 2 of 4