CAT28C512_04 Datasheet, PDF (4/12 Pages) Catalyst Semiconductor – 512K-Bit CMOS PARALLEL EEPROM

CAT28C512/513
MODE SELECTION
Mode
CE
WE
OE
I/O
Power
Read
L
H
L
D_OUT
ACTIVE
Byte Write (WE Controlled)
L
H
D_IN
ACTIVE
Byte Write (CE Controlled)
L
H
D_IN
ACTIVE
Standby, and Write Inhibit
H
X
X
High-Z
STANDBY
Read and Write Inhibit
X
H
H
High-Z
ACTIVE
CAPACITANCE T_A = 25°C, f = 1.0 MHz, V_CC = 5V
Symbol
Test
CI/O(1)
Input/Output Capacitance
CIN(1)
Input Capacitance
Max.
10
6
Units
pF
pF
Conditions
VI/O = 0V
VIN = 0V
A.C. CHARACTERISTICS, Read Cycle
V_CC=5V + 10%, Unless otherwise specified
28C512/513-12 28C512/513-15
Symbol Parameter
Min. Max. Min. Max. Units
t_RC
Read Cycle Time
t_CE
CE Access Time
120
150
ns
120
150 ns
t_AA
Address Access Time
120
t_OE
OE Access Time
50
t_LZ(1)
CE Low to Active Output
0
t_OLZ(1) OE Low to Active Output
0
t_HZ(1)(2) CE High to High-Z Output
50
t_OHZ(1)(2) OE High to High-Z Output
50
t_OH(1)
Output Hold from Address Change 0
150 ns
70 ns
0
ns
0
ns
50 ns
50 ns
0
ns
Power-Up Timing
Symbol
t_PUR ⁽¹⁾
t_PUW ⁽²⁾
Parameter
Power-up to Read Operation
Power-up to Write Operation
Min.
Max
100
5
10
Units
µs
ms
Note:
(1) This parameter is tested initially and after a design or process change that affects the parameter.
(2) Output floating (High-Z) is defined as the state when the external data line is no longer driven by the output buffer.
Doc. No. 1007, Rev. F
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