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| CAT93C56_07 Datasheet, PDF (2/18 Pages) Catalyst Semiconductor – 2-Kb Microwire Serial CMOS EEPROM | |||
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CAT93C56, CAT93C57
Absolute Maximum Ratings(1)
Parameters
Storage Temperature
Voltage on Any Pin with Respect to Ground(2)
Reliability Characteristics(3)
Symbol Parameter
NEND(4) Endurance
TDR Data Retention
Ratings
-65 to +150
-0.5 to +6.5
Units
°C
V
Min
1,000,000
100
Units
Program/ Erase Cycles
Years
D.C. OPERATING CHARACTERISTICS, CAT93C56, Die Rev. G â New Product
VCC = +1.8V to +5.5V, TA=-40°C to +85°C unless otherwise specified.
Symbol
ICC1
ICC2
ISB1
ISB2
ILI
ILO
VIL1
VIH1
VIL2
VIH2
VOL1
VOH1
VOL2
VOH2
Parameter
Power Supply Current (Write)
Power Supply Current (Read)
Power Supply Current
(Standby) (x8 Mode)
Power Supply Current
(Standby) (x16 Mode)
Input Leakage Current
Output Leakage Current
Input Low Voltage
Input High Voltage
Input Low Voltage
Input High Voltage
Output Low Voltage
Output High Voltage
Output Low Voltage
Output High Voltage
Test Conditions
fSK = 1MHz, VCC = 5.0V
fSK = 1MHz, VCC = 5.0V
VIN = GND or VCC, CS = GND
ORG = GND
VIN = GND or VCC, CS = GND
ORG = Float or VCC
VIN = GND to VCC
VOUT = GND to VCC, CS = GND
4.5V ⤠VCC < 5.5V
4.5V ⤠VCC < 5.5V
1.8V ⤠VCC < 4.5V
1.8V ⤠VCC < 4.5V
4.5V ⤠VCC < 5.5V, IOL = 2.1mA
4.5V ⤠VCC < 5.5V, IOH = -400µA
1.8V ⤠VCC < 4.5V, IOL = 1mA
1.8V ⤠VCC < 4.5V, IOH = -100µA
Min
Max Units
1
mA
500
µA
2
µA
1
µA
1
µA
1
µA
-0.1
0.8
V
2
VCC + 1
V
0
VCC x 0.2 V
VCC x 0.7 VCC + 1
V
0.4
V
2.4
V
0.2
V
VCC - 0.2
V
Notes:
(1) Stresses above those listed under âAbsolute Maximum Ratingsâ may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions outside of those listed in the operational sections of this
specification is not implied. Exposure to any absolute maximum rating for extended periods may affect device performance and reliability.
(2) The DC input voltage on any pin should not be lower than -0.5V or higher than VCC + 0.5V. During transitions, the voltage on any pin may
undershoot to no less than -1.5V or overshoot to no more than VCC + 1.5V, for periods of less than 20 ns.
(3) These parameters are tested initially and after a design or process change that affects the parameter according to appropriate AEC-Q100
and JEDEC test methods.
(4) Block Mode, VCC = 5V, 25°C
Doc. No. MD-1088 Rev. P
2
© Catalyst Semiconductor, Inc.
Characteristics subject to change without notice
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