CAT93C46_07 Datasheet, PDF (2/15 Pages) Catalyst Semiconductor – 1-Kb Microwire Serial EEPROM

ABSOLUTE MAXIMUM RATINGS⁽¹⁾
Storage Temperature
Voltage on Any Pin with Respect to Ground ⁽²⁾
CAT93C46
-65°C to +150°C
-0.5 V to +6.5 V
RELIABILITY CHARACTERISTICS⁽³⁾
Symbol
N ⁽⁴⁾
END
T_DR
Parameter
Endurance
Data Retention
Min
1,000,000
100
Units
Program/ Erase Cycles
Years
D.C. OPERATING CHARACTERISTICS
V_CC = +1.8V to +5.5V, T_A=-40°C to +85°C, unless otherwise specified.
Symbol
Parameter
Test Conditions
Min
ICC1
Power Supply Current
(Write)
fSK = 1MHz
VCC = 5.0V
ICC2
Power Supply Current
(Read)
fSK = 1MHz
VCC = 5.0V
ISB1
Power Supply Current
VIN=GND or VCC, CS =GND
(Standby) (x8 Mode)
ORG=GND
ISB2
Power Supply Current
VIN=GND or VCC, CS =GND
(Standby) (x16Mode)
ORG=Float or VCC
ILI
Input Leakage Current
VIN = GND to VCC
ILO
Output Leakage Current
VOUT = GND to VCC,
CS = GND
VIL1
Input Low Voltage
4.5V ≤ VCC < 5.5V
-0.1
VIH1
Input High Voltage
4.5V ≤ VCC < 5.5V
2
VIL2
Input Low Voltage
1.8V ≤ VCC < 4.5V
0
VIH2
Input High Voltage
1.8V ≤ VCC < 4.5V
VCC x 0.7
VOL1
Output Low Voltage
4.5V ≤ VCC < 5.5V
IOL = 2.1mA
VOH1
Output High Voltage
4.5V ≤ VCC < 5.5V
2.4
IOH = -400µA
VOL2
Output Low Voltage
1.8V ≤ VCC < 4.5V
IOL = 1mA
VOH2
Output High Voltage
1.8V ≤ VCC < 4.5V
IOH = -100µA
VCC - 0.2
Max
1
500
2
1
1
1
0.8
VCC + 1
VCC x 0.2
VCC+1
0.4
0.2
Units
mA
µA
µA
µA
µA
µA
V
V
V
V
V
V
V
V
Notes:
(1) Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions outside of those listed in the operational sections of this
specification is not implied. Exposure to any absolute maximum rating for extended periods may affect device performance and reliability.
(2) The DC input voltage on any pin should not be lower than -0.5V or higher than V_CC +0.5V. During transitions, the voltage on any pin may
undershoot to no less than -1.5V or overshoot to no more than V_CC +1.5V, for periods of less than 20 ns.
(3) These parameters are tested initially and after a design or process change that affects the parameter according to appropriate AEC-Q100
and JEDEC test methods.
(4) Block Mode, V_CC = 5V, 25°C
© 2007 by Catalyst Semiconductor, Inc.
Characteristics subject to change without notice
2
Doc No. 1106, Rev. F