CM3131 Datasheet, PDF (7/10 Pages) California Micro Devices Corp – Triple Linear Voltage Regulator for DDR-I/-II Memory

CM3131
Specifications (cont’d)
ELECTRICAL OPERATING CHARACTERISTICS ^{(SEE NOTE 1)}
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP
General Parameters
TOVER
Shutdown Junction
Temperature
-
150
VDDQ Regulator/Driver Parameters (with FDP6030L or similar MOSFET as an external transistor)
VCC MIN
Input Voltage
VDDQ = 2.5V, IDDQ = 6A,
each channel, SENSE = 0V
2.80
VDDQ
Output Voltage Range
IDDQ = 2.5A, VCC = 3.3V,
SENSE = 0V
2.45
2.50
VDRIVE H 5
DRIVE High Output
Voltage
VSTBY = 5V, VCC = 3.3V
9.50
VDRIVE H 3
DRIVE High Output
VSTBY = 3.3V, VCC = 3.3V
6.1
Voltage
CLOAD
External FET Gate
Capacitance
VSTBY = 5V, VCC = 3.3V
1200
tRISE
VDDQ LOAD
DRIVE Voltage Rise
Time
Load Regulation @
25°C
VSTBY = 5V, VCC = 3.3V,
2.5
CLOAD = 1200pF
VCC = 3.3V, IDDQ = 0.1A to 6A
-1.0
-
each channel
VDDQ LINE
Line Regulation @ 25°C
IDDQ = 2.5A, VCC = 2.8V to
3.6V
-1.0
-
VTT Regulator Parameters
VTT
Output Voltage Range
VTT LOAD
Load Regulation @ 25C
VTT LINE
Line Regulation @ 25C
ITT LIM
Current Limit
ITT SC
Short Circuit Current
Limit
VDDQ = 2.50V, ITT = 0A
ITT = 0.1A to 2A, VDDQ = 2.5V
ITT = 0A, VCC = 2.8V to 3.6V
VTT < 1V
1.20
1.25
-1.0
-
-1.0
-
2.3
0.6
VSTBY Regulator Parameters
VDDQ STBY
Output Voltage Range
IDDQ =150mA, VSTBY = 5V,
SENSE =0V
2.45
2.50
VDDQSB LD
Load Regulation @ 25C
IDDQ = 10mA to 500mA,
VSTBY = 5V
VDDQ SBLN
Line Regulation @ 25C
IDDQ = 150mA,
VSTBY = 3.0V to 5.5V
VDROPOUT
Dropout Voltage
IDDQ = 250mA, each channel
ISTBY LIM
Overload Current Limit
ISTBY SC
Short Circuit Current
Limit
VDDQ < 1V
Note 1: All parameters specified at TA = 0°C to +70°C unless otherwise noted.
-1.0
-
-1.0
-
250
400
170
MAX
-
2.55
1.0
1.0
1.30
1.0
1.0
2.55
1.0
1.0
450
UNITS
°C
V
V
V
V
pF
ms
%
%
V
%
%
A
A
V
%
%
mV
mA
mA
© 2004 California Micro Devices Corp. All rights reserved.
02/02/04 430 N. McCarthy Blvd., Milpitas, CA 95035-5112 Tel: [phone] Fax: [phone]
www.calmicro.com
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