CM1223 Datasheet, PDF (5/13 Pages) California Micro Devices Corp – Industry First Low Capacitance ESD Protection Arrays w/Backdrive Protection

CM1223
ELECTRICAL OPERATING CHARACTERISTICS^{(SEE NOTE 1)}
SYMBOL PARAMETER
CONDITIONS
V_P
I_P
V_SCL
Operating Supply Voltage (V_P-V_N)
Operating Supply Current
Signal Clamp Voltage
Positive Transients
Negative Transients
(V_P-V_N)=3.3V
I_F = 8mA; T_A=25°C
I_LEAK
C_IN
Channel Leakage Current
Channel Input Capacitance
T_A=25°C; V_P=5V, V_N=0V
At 1 MHz, V_P=3.3V, V_N=0V, V_IN=1.65V;
Note 2 applies
ΔC_IN
Channel Input Capacitance
Matching
At 1 MHz, V_P=3.3V, V_N=0V, V_IN=1.65V;
Note 2 applies
C_MUTUAL Mutual Capacitance between sig- At 1 MHz, V_P=3.3V, V_N=0V, V_IN=1.65V;
nal pin and adjacent signal pin
Note 2 applies
V_ESD
ESD Protection
Peak Discharge Voltage at any
channel input, in system
a) Contact discharge per
IEC 61000-4-2 standard
b) Human Body Model,
MIL-STD-883, Method
3015
Notes 2, 4 & 5; T_A=25°C
Notes 2, 3 & 5; T_A=25°C
V_CL Channel Clamp Voltage
Positive Transients
Negative Transients
T_A=25°C, I_PP = 1A, t_P = 8/20uS;
Notes 2 & 5
R_DYN
Dynamic Resistance
Positive Transients
Negative Transients
T_A=25°C, I_PP = 1A, t_P = 8/20uS
Any I/O pin to Ground; Notes 2 & 5
MIN
6.7
0.60
±8
±15
TYP
3.3
8.2
0.80
±0.1
1.0
0.02
0.11
+8.8
-1.4
0.7
0.4
MAX
5.5
8.0
UNITS
V
μA
V
V
±1.0 μA
1.5
pF
pF
pF
kV
kV
V
V
Ω
Ω
Note 1: All parameters specified at T_A = -40°C to +85°C unless otherwise noted.
Note 2: These parameters guaranteed by design and characterization.
Note 3: Human Body Model per MIL-STD-883, Method 3015, C_Discharge = 100pF, R_Discharge = 1.5KΩ, V_P = 3.3V, V_N grounded.
Note 4: Standard IEC 61000-4-2 with C_Discharge = 150pF, R_Discharge = 330Ω, V_P = 3.3V, V_N grounded.
Note 5: These measurements performed with no external capacitor on V_P (V_P floating).
© 2006 California Micro Devices Corp. All rights reserved.
08/02/06
490 N. McCarthy Blvd., Milpitas, CA 95035-5112 ● Tel: [phone] ● Fax: [phone] ● www.cmd.com 5