CSPESD301 Datasheet, PDF (3/7 Pages) California Micro Devices Corp – 1,2 and 3-Channel ESD Arrays in CSP

Specifications
PARAMETER
Storage Temperature Range
DC Package Power Rating
CSPESD301/302/303
ABSOLUTE MAXIMUM RATINGS
RATING
-65 to +150
200
UNITS
°C
mW
PARAMETER
Operating Temperature Range
STANDARD OPERATING CONDITIONS
RATING
-40 to +85
UNITS
°C
ELECTRICAL OPERATING CHARACTERISTICS¹
SYMBOL
V_SO
I_LEAK
V_SIG
V_ESD
V_CL
R_D
C
PARAMETER
Diode Stand-off Voltage
Diode Leakage Current
Small Signal Clamp Voltage
Positive Clamp
Negative Clamp
In-system ESD Withstand Voltage
a) Human Body Model, MIL-STD-883,
Method 3015
b) Contact Discharge per IEC 61000-4-2
Clamping Voltage during ESD Discharge
MIL-STD-883 (Method 3015), 8kV
Between adjacent bumps
Between diagonal bumps
Dynamic Resistance
Between adjacent bumps
Between diagonal bumps
Capacitance
CONDITIONS
I_DIODE = ±10µA
V_IN=3.3V
I_DIODE = 10mA
I_DIODE = -10mA
Notes 2, 3 and 4
Notes 2, 3 and 4
Notes 2, 3 and 4
At 0VDC, 1MHz, 30mVAC
MIN TYP
±5.9
6.0 7.6
-9.2 -7.6
±30
±15
19.5
19.9
0.85
1.10
27
MAX
100
9.2
-6.0
Note 1: T_A=25°C unless otherwise specified.
Note 2: ESD applied to input and output pins with respect to
another diode, one at a time.
Note 3: Unused pins are left open.
Note 4: These parameters are guaranteed by design and char-
acterization.
I
IESD
slope = ¹/_RD
UNITS
V
nA
V
V
kV
kV
V
V
Ω
Ω
pF
10mA
10µA
ILEAK
V
3.3V VSO VSIG VCL
Figure 1. Parameter Legend
© 2003 California Micro Devices Corp. All rights reserved.
12/10/03 430 N. McCarthy Blvd., Milpitas, CA 95035-5112 L Tel: [phone] L Fax: [phone] L www.calmicro.com
3