MSW9N90 Datasheet, PDF (3/4 Pages) Bruckewell Technology LTD – 900V N-Channel MOSFET

Preliminary MSW9N90
900V N-Channel MOSFET
Switching Characteristics
Symbol
Test Conditions
t_d(on)
t_r
t_d(off)
V_DS = 450 V, I_D = 9 A,
R_G = 25 Ω
tf
Q_g
Q_gs
V_DS = 720 V,I_D = 9 A,
V_GS = 10 V
Q_gd
Min
Typ.
Max. Units
--
50
--
ns
--
120
--
ns
--
100
--
ns
--
80
--
ns
--
45
--
nC
--
14
--
nC
--
18
--
nC
Dynamic Characteristics
Symbol
Test Conditions
C_ISS
C_OSS
C_RSS
V_DS = 25 V, V_GS = 0 V,
F = 1.0MHz
Min
Typ.
Max. Units
--
2200
--
pF
--
180
--
pF
--
15
--
pF
Source-Drain Diode Maximum Ratings and Characteristics
Symbol
Parameter
Test Conditions
Min
I_S
--
I_SM
--
V_SD
I_S = 9 A , V_GS = 0 V
--
t_rr
I_S = 9 A , V_GS = 0 V
--
Q_rr
diF/dt = 100A/μs
--
Notes;
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L= 21mH, I_AS=9A, V_DD=50V, R_G=25Ω, Starting T_J=25℃
3. I_SD≦9A, di/dt≦200A/μs,V_DD≦BV_DSS, Starting T_J=25℃
4. Pulse Test: Pulse Width ≦ 300μs, Duty Cycle≦ 2%
5. Essentially Independent of Operating Temperature
Typ.
Max. Units
--
9
A
--
36
--
1.5
V
550
--
ns
6.5
--
μC
Publication Order Number: [MSW9N90]
© Bruckewell Technology Corporation Rev. A -2014