MSW9N90 Datasheet, PDF (1/4 Pages) Bruckewell Technology LTD – 900V N-Channel MOSFET

Preliminary MSW9N90
900V N-Channel MOSFET
Description
This latest technology has been especially designed to
minimize on-state resistance, have a high rugged
avalanche characteristics. These devices are well suited
for high efficiency switch mode power supplies.
Features
• RDS(on) (Max 1.4 Ω )@VGS=10V
• Gate Charge (Typical 45nC)
• Improved dv/dt Capability, High Ruggedness
• 100% Avalanche Tested
• Maximum Junction Temperature Range (150˚C)
• RoHS compliant package
Packing & Order Information
30/Tube ; 540/Box
Graphic symbol
TO-247
TO-3P
Publication Order Number: [MSW9N90]
© Bruckewell Technology Corporation Rev. A -2014