MSW9N90 Datasheet, PDF (2/4 Pages) Bruckewell Technology LTD – 900V N-Channel MOSFET

Preliminary MSW9N90
900V N-Channel MOSFET
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings (Tc=25°C unless otherwise noted)
Symbol
Parameter
V_DSS
Drain-Source Voltage
V_GS
Gate-Source Voltage
I_D
I_DM
E_AS
E_AR
dV/dt
Drain Current -Continuous (TC=25°C)
Drain Current -Continuous (TC=100°C)
Drain Current Pulsed
Single Pulsed Avalanche Energy
Repetitive Avalanche Energy
Peak Diode Recovery dV/dt
Power Dissipation (TC = 25 °C)
P_D
- Derate above 25°C
T_J,T_STG
T_L
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes, 1/8'' from
case for 5 seconds
●Drain current limited by maximum junction temperature
Thermal Resistance Characteristics
Symbol
R_θJc
Junction-to-Case
R_θJA
Junction-to-Ambient
Parameter
Value
900
±30
9
5.7
36
900
28
4
280
2.22
-55 to +150
300
Max.
0.45
40
Unit
V
V
A
A
A
mJ
mJ
V/ns
W
W/°C
°C
°C
Units
°C/W
On Characteristics
Symbol
Test Conditions
V_GS
V_DS = V_GS , I_D = 250μA
*R_DS(ON)
V_GS = 10 V , I_D = 4.5 A
Min
Typ.
Max. Units
3.0
--
5.0
V
--
1.05
1.4
Ω
Off Characteristics
Symbol
Test Conditions
BV_DSS
V_GS = 0 V , I_D=250μA
△BV_DSS /△T_J
I_D = 250μA, Referenced to 25°C
I_DSS
I_GSSF
V_DS = 900 V , V_GS = 0 V
V_DS = 720 V , V_C = 125°C
V_GS = 30 V , V_DS = 0 V
I_GSSR
V_GS = -30 V , V_DS = 0 V
Min
Typ.
Max. Units
900
--
--
V
--
0.99
--
V/°C
--
--
10
μA
100
--
--
100
nA
--
--
-100
nA
Publication Order Number: [MSW9N90]
© Bruckewell Technology Corporation Rev. A -2014