MSF8N80 Datasheet, PDF (3/9 Pages) Bruckewell Technology LTD – 800V N-Channel MOSFET

MSF8N80-G 800V N-Channel MOSFET
Source-Drain Diode Maximum Ratings and Characteristics
I_S Continuous Source-Drain Diode Forward Current
I_SM Pulsed Source-Drain Diode Forward Current
V_SD Source-Drain Diode Forward Voltage
I_S=8A, V_GS=0V
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
I_S=8 A , V_GS= 0V
di_F/dt=100A/μs
Notes:
1. Repeativity rating : pulse width limited by junction temperature
2. L = 25.0mH, IAS =8.0A, VDD = 50V, RG = 25Ω , Starting TJ = 25°C
3. ISD ≤ 8.0A, di/dt ≤ 200A/us, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse Width ≤ 300us, Duty Cycle ≤ 2%
5. Essentially independent of operating temperature.
––
––
8.0
A
–– –– 32.0
––
––
1.4
V
–– 0.7
––
us
–– 8.0
–– μC
©Bruckewell Technology Corporation Rev. A -2012