MSF8N80 Datasheet, PDF (1/9 Pages) Bruckewell Technology LTD – 800V N-Channel MOSFET

MSF8N80-G 800V N-Channel MOSFET
GENERAL DESCRIPTION
This Power MOSFET is produced using the advanced planar stripe, DMOS
technology. This latest technology has been especially designed to
minimize on-state resistance, have high rugged avalanche characteristics.
These devices are well suited for high efficiency switch mode power
supplies, active power factor correction, and electronic lamp ballasts based
on half bridge topology.
FEATURES
• RDS(on) (typ 1.3 Ω )@VGS=10V
• Gate Charge (Typical 39nC)
• Improved dv/dt Capability, High Ruggedness
• 100% Avalanche Tested
• Maximum Junction Temperature Range (150°C)
• Halogen Free
Absolute Maximum Ratings (Tc=25°C unless otherwise specified)
Symbol
Parameter
V_DSS
I_D
I_DM
V_GS
E_AS
E_AR
d_v/d_t
P_D
Drain-Source Voltage
Drain Current -Continuous (T_C=25℃)
Drain Current -Continuous (T_C=100℃)
Drain Current -Pulsed
Gate-Source Voltage
Single Pulsed Avalanche Energy
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T_C=25℃)
- Derate above 25℃
T_J,T_STG Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
T_L
1/8'' from case for 5 seconds
• Drain current limited by maximum junction temperature
Value
800
8
5.0
32
±30
850
17.8
4.5
59
0.48
–55 to + 150
300
Unit
V
A
A
A
V
mJ
mJ
V/ns
W
W/℃
℃
℃
©Bruckewell Technology Corporation Rev. A -2012