MSF8N80 Datasheet, PDF (2/9 Pages) Bruckewell Technology LTD – 800V N-Channel MOSFET

MSF8N80-G 800V N-Channel MOSFET
Thermal Resistance Characteristics
Symbol
Parameter
Typ.
R_θJC Junction-to-Case
––
R_θJA Junction-to-Ambient
––
Electrical Characteristics (Tc=25°C unless otherwise specified)
Symbol
Parameter
Test Conditions
On Characteristics
V_GS Gate Threshold Voltage
V_DS=V_GS,I_D=250μA
Static Drain-Source
R_DS(ON)
On-Resistance
V_GS=10V,I_D=4.0A
Off Characteristics
BV_DSS Drain-Source Breakdown Voltage
△BVDSS Breakdown Voltage Temperature
/△TJ Coefficient
V_GS=0 V , I_D=250μA
I_D=250μA, Referenced to 25℃
I_DSS Zero Gate Voltage Drain Current
V_DS=800V , V_GS= 0 V
V_DS=640V , V_C= 125℃
Gate-Body Leakage Current,
I_GSSF
Forward
V_GS=30V , V_DS=0 V
Gate-Body Leakage Current,
I_GSSR
Reverse
V_GS=-30V , V_DS=0 V
Dynamic Characteristics
C_iss Input Capacitance
C_oss Output Capacitance
C_rss Reverse Transfer Capacitance
V_DS=25V, V_GS=0V,
f=1.0MHz
Switching Characteristics
t_d(on) Turn-On Time
t_r Turn-On Rise Time
t_d(off) Turn-Off Delay Time
V_DS=400 V, I_D=8.0A,
R_G=25Ω
tf Turn-Off Fall Time
Q_g Total Gate Charge
Q_gs Gate-Source Charge
Q_gd Gate-Drain Charge
V_DS=640V,I_D=8.0A,
V_GS=10 V
Max.
2.1
62.5
Units
℃/W
Min Type Max Units
3.0
--
5.0 V
–– 1.3 1.6 Ω
800 ––
–– 0.6
–– ––
–– ––
–– ––
––
V
–– V/℃
10 μA
100 μA
100 nA
–– –– –100 nA
–– 1700 –– pF
–– 140 –– pF
–– 15
–– pF
–– 50
--
ns
–– 100
--
ns
–– 70
--
ns
–– 70
--
ns
–– 37
--
nC
–– 11
–– nC
–– 15
–– nC
©Bruckewell Technology Corporation Rev. A -2012