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MSF6N60 Datasheet, PDF (3/5 Pages) Bruckewell Technology LTD – N-Channel Enhancement Mode Power MOSFET
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Bruckewell Technology Corp., Ltd.
http://www.bruckewell-semi.com
Electrical Characteristics ( TC = 25 °C unless otherwise noted )
Symbol Parameter
Static Characteristics
BVDSS
Drain-Source Breakdown
Voltage
ΔBVDSS/
ΔTJ
VGS(th)
Breakdown Voltage
Temperature coefficient
Gate Threshold Voltage
IDSS Drain-Source Leakage
Current
IGSS Gate-Source Leakage,
Forward
RDS(ON) Static Drain-Source
On-state Resis-tance
Dynamic Characteristics
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd Gate-Drain Charge(Miller
Charge)
td(on) Turn-on Delay Time
tr
Rise Time
td(off) Turn-off Delay Time
tf
Fall Time
Ciss
Input Capacitance
Coss Output Capacitance
Crss
Reverse Transfer
Capacitance
Test Conditions
VGS = 0 V,
ID = 250 uA
ID = 250 uA, referenced
to 25 °C
VDS = VGS,
ID = 250 uA
VDS = 600 V,
VGS = 0 V
VDS = 480 V,
TC = 125 °C
VGS=±30
VGS = 10 V,
ID = 2.75 A
VDS = 480 V,
VGS = 10 V,
ID = 5.5 A
VDD=300V, ID=5.5A,
VGS=10V,
RG=25Ω, RD=75Ω
VGS=0V, VDS=25V,
f=1MHz
Min
600
-
2.0
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ Max
-
-
0.60 -
-
4.0
-
1
-
10
- 100
1.7 2.0
16 20
3.5
-
6.5
-
15 40
45 100
45 100
45 100
620 810
65 85
7
10
Units
V
V/°C
V
uA
nA
nA
Ω
nC
ns
pF
 ▷