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MSF6N60 Datasheet, PDF (2/5 Pages) Bruckewell Technology LTD – N-Channel Enhancement Mode Power MOSFET | |||
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Bruckewell Technology Corp., Ltd.
http://www.bruckewell-semi.com
Note:
1.Repetitive rating; pulse width limited by maximum junction temperature.
2. IAS=4A, VDD=50V, L=8mH, VG=10V, starting TJ=+25°C.
3. ISDâ¤4A, dI/dtâ¤100A/Çs, VDDâ¤BVDSS, starting TJ=+25°C.
Thermal Characteristics
Symbol
Parameter
Value
Min. Typ. Max.
Units
RθJC
Thermal Resistance,
Junction-to-Case
RθJA
Thermal Resistance,
Junction-to-Ambient
-
-
3.7
-
-
62.5
°C/W
°C/W
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