MSF6N60 Datasheet, PDF (1/5 Pages) Bruckewell Technology LTD – N-Channel Enhancement Mode Power MOSFET

Bruckewell Technology Corp., Ltd.
http://www.bruckewell-semi.com
Product Specification
N-Channel Enhancement Mode Power MOSFET
MSF6N60
●Description
The MSF6N60 is a N-channel enhancement-mode MOSFET, providing the designer with the
best combination of fast switching, ruggedized device design, low on-resistance and cost
effectiveness. The TO-220F package is universally preferred for all commercial-industrial
applications
●FEATURES:
ID=5.5A
•BVDSS=650V typically @ Tj=150°C
VDS=600V
•Low On Resistance
RDS(on)max = 2.0Ƹ
•Simple Drive Requirement
@VGS = 10 V
•Low Gate Charge
•Fast Switching Characteristic
TO220F
•RoHS compliant package
●APPLICATION:
• Open Framed Power Supply
• Adapter
• STB
Absolute Maximum Ratings
Symbol
Parameter
Value
V_DSS
V_GS
I_D
I_DM
E_AS
I_AR
dv/dt
T_L
TPKG
P_D
T_STG
T_J
Drain to Source Voltage
Gate to Source Voltage
Continuous Drain Current(@T_C = 25 °C)
Continuous Drain Current(@T_C = 100 °C)
Drain Current Pulsed
Single Pulsed Avalanche Energy
Avalanche Current
Peak Diode Recovery dv/dt
Maximum Temperature for Soldering @ Lead at 0.125
in(0.318mm) from case for 10 seconds
Maximum Temperature for Soldering @ Package Body for
10 seconds
Total Power Dissipation(@T_C = 25 °C)
Derating Factor above 25 °C
Operating Junction Temperature
Storage Temperature
600
±30
5.5
3.3
22
300
5.5
4.5
300
260
40
0.31
-55 ~ 150
150
Units
V
V
A
A
A
mJ
A
V/ns
°C
°C
W
W/°C
°C
°C