MSF10N80A Datasheet, PDF (3/8 Pages) Bruckewell Technology LTD – 800V N-Channel MOSFET

Source-Drain Diode Maximum Ratings and Characteristics
I_S Continuous Source-Drain Diode Forward Current
I_SM Pulsed Source-Drain Diode Forward Current
V_SD Source-Drain Diode Forward Voltage I_S=10A, V_GS=0V
trr Reverse Recovery Time
I_S=10 A , V_GS= 0V
Qrr Reverse Recovery Charge
di_F/dt=100A/μs
Notes;
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L=18mH, I_AS=10A, V_DD=5V, R_G=25Ω, Starting T_J=25℃
3. ISD≦10A, di/dt≦200A/μs,VDD≦BVDSS, Starting TJ=25℃
4. Pulse Test: Pulse Width ≦ 300μs, Duty Cycle≦ 2%
5. Essentially Independent of Operating Temperature
Bruckewell Technology Corp., Ltd.
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––
10
A
–– –– 40.0
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––
1.5
V
–– 730 –– ns
––
12
–– μC